Related papers: Quantized transport in topological insulator n-p-n…
Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor $\nu=0$ under an external magnetic field if there is a finite potential difference between the top and bottom…
We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the…
We study transport properties of the helical edge states of two-dimensional integer and fractional topological insulators via double constrictions. Such constrictions couple the upper and lower edges of the sample, and can be made and tuned…
A p-n junction, an interface between two regions of a material populated with carriers of opposite charge, is a basic building block of solid state electronic devices. From the fundamental physics perspective, it often serves as a tool to…
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…
We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…
Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…
Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is…
Using density functional theory and nonequilibrium Greens functions-based methods we investigated the electronic and transport properties of monolayer TiS3 pn-junction. We constructed a lateral pn-junction in monolayer TiS3 by using Li and…
We examine the transport properties of magnetically doped topological insulator (TI) thin films subject to correlated non-magnetic disorder. For the disorder we choose a quasi-periodic potential with a random phase. We restrict the disorder…
A three-dimensional weak topological insulator (WTI), being equivalent to stacked layers of two-dimensional quantum spin-Hall insulators, accommodates massless Dirac electrons on its side surface. A notable feature of WTIs is that surface…
Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can…
The bulk-boundary correspondence of the second-order topological insulator (SOTI) has been well established, but a universal transport signature for open systems is still absent. For a variety of SOTIs induced by applying in-plane magnetic…
Magnetically doped topological insulators (TIs) exhibit two distinct phases: the quantum anomalous Hall (QAH) phase when the Fermi level resides within the surface gap, and a metallic phase outside the gap. The QAH phase hosts…
We propose models of two dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk, and a "holographic…
The low-energy band-structure of electrons propagating on a lateral surface of a heterostructure consisting of three dimensional topological insulator (TI) and magnetic insulator layers has been calculated. The energy spectrum is highly…