English
Related papers

Related papers: Perpendicular magnetic anisotropy at the Fe/MgAl$_…

200 papers

Perpendicularly magnetized films showing small saturation magnetization, $M_\mathrm{s}$, are essential for spin-transfer-torque writing type magnetoresistive random access memories, STT-MRAMs. An intermetallic compound, {(Mn-Cr)AlGe} of the…

Materials Science · Physics 2021-07-02 Takahide Kubota , Keita Ito , Rie Y Umetsu , Koki Takanashi

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in…

Magnetocrystalline anisotropy is a fundamental property of magnetic materials that determines the dynamics of magnetic precession, the frequency of spin waves, the thermal stability of magnetic domains, and the efficiency of spintronic…

We investigated electronic structure and magnetic anisotropy in the Fe/MgO interface of magnetic metal and dielectric insulator under the Cr layer of small electronegativity, by means of the first-principles density functional approach. The…

Materials Science · Physics 2017-08-09 Nurul Ikhsan , Tomosato Kanagawa , Indra Pardede , Masao Obata , Tatsuki Oda

The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the…

Materials Science · Physics 2016-04-29 Dorj Odkhuu , Won Seok Yun , S. H. Rhim , Soon-Cheol Hong

Controlling the perpendicular magnetic anisotropy (PMA) in thin films has received considerable attention in recent years due to its technological importance. PMA based devices usually involve heavy-metal (oxide)/ferromagnetic-metal…

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…

Materials Science · Physics 2014-11-04 Zhaoqiang Bai , Lei Shen , Yongqing Cai , Qingyun Wu , Minggang Zeng , Guchang Han , Yuan Ping Feng

Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…

Materials Science · Physics 2017-06-21 Le Duc Anh , Noboru Okamoto , Munetoshi Seki , Hitoshi Tabata , Masaaki Tanaka , Shinobu Ohya

The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF…

Perpendicular magnetic anisotropy (PMA) and dynamic magnetization reversal process in [CoFeB $t$ nm/Pd 1.0 nm]$_n$ ($t$ = 0.4, 0.6, 0.8, 1.0, and 1.2 nm; $n$ = 2 - 20) multilayer films have been studied by means of magnetic hysteresis and…

Mesoscale and Nanoscale Physics · Physics 2014-10-14 Duc-The Ngo , Duy-Truong Quach , Quang-Hung Tran , Kristian Mølhave , The-Long Phan , Dong-Hyun Kim

Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport…

Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by…

We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the…

Materials Science · Physics 2021-02-24 Keisuke Masuda , Hiroyoshi Itoh , Yoshiaki Sonobe , Hiroaki Sukegawa , Seiji Mitani , Yoshio Miura

All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown…

Materials Science · Physics 2017-09-27 G. P. Zhang , Y. H. Bai , Thomas F. George

Perpendicular magnetic anisotropy (PMA) energy up to $K_{\mathrm{u}}=6.1\pm0.8$ MJ m$^{-3}$ is demonstrated in this study by inducing large lattice-distortion exceeding 3% at room temperature in epitaxially distorted cobalt ferrite Co$ _{x}…

Materials Science · Physics 2021-12-03 Hiroshige Onoda , Hiroaki Sukegawa , Jun-ichiro Inoue , Hideto Yanagihara

Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two…

Mesoscale and Nanoscale Physics · Physics 2018-04-18 Jun'ichi Ieda , Stewart E. Barnes , Sadamichi Maekawa

Element-specific orbital magnetic moments and their anisotropies in perpendicularly magnetised Co/Pd multilayers are investigated using Co L-edge and Pd M-edge angle-dependent x-ray magnetic circular dichroism. We show that the orbital…

Materials Science · Physics 2019-04-23 Jun Okabayashi , Yoshio Miura , Hiro Munekata

An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a heavy metal (HM) is possible through the strong breaking of the structural inversion symmetry in the layered films. Here we show that the…

The magnetic anisotropy and magnetic interactions at the interface between Fe and NiO(001) were investigated. Depending on the growth conditions of the NiO(001) layers and the post-annealing temperature, the preferential magnetization…

To study how nitrogen contributes to perpendicular magnetocrystalline anisotropy (PMA) in the ferrimagnetic antiperovskite Mn$_4$N, we examined both the fabrication of epitaxial Mn$_4$N films with various nitrogen contents and…

Materials Science · Physics 2020-01-17 Shinji Isogami , Keisuke Masuda , Yoshio Miura