Related papers: Perpendicular magnetic anisotropy at the Fe/MgAl$_…
We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive…
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$,…
Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness…
The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at…
The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray…
We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by…
We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1…
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth…
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer…
Search for ultrathin magnetic film with large perpendicular magnetocrystalline anisotropy (PMA) has been inspired for years by the continuous miniaturization of magnetic units in spintronics devices. The common magnetic materials used in…
The origin of the interfacial perpendicular magnetic anisotropy (PMA) induced in the ultrathin Fe layer on the Au(111) surface was examined using synchrotron-radiation-based M\"{o}ssbauer spectroscopy (MS), X-ray magnetic circular dichroism…
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ),…
High perpendicular magnetic anisotropy (PMA), a property needed for nanoscale spintronic applications, is rare in oxide conductors. We report the observation of a PMA up to 0.23 MJ/m3 in modestly strained epitaxial NiCo2O4 (NCO) films which…
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy…
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power…
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA)…