Related papers: High density carriers at a strongly coupled graphe…
The discovery of flat bands with non-trivial band topology in magic angle twisted bi-layer graphene (MATBG) has provided a unique platform to study strongly correlated phe-nomena including superconductivity, correlated insulators, Chern…
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which…
Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-B\"uttiker formalism along with the tight-binding model, we…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…
The folding of monolayer graphene leads to new layered systems, termed twisted bilayer graphene (TBG), generally displaying a certain interlayer rotation away from crystallographic alignment. We here present an atomic force microscopy study…
Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both…
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel…
The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of…
We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering…
Twisted bilayer graphene (tBLG) has emerged as an exciting platform for novel condensed matter physics. However, electron-phonon ($e$-ph) interactions in tBLG and their effects on electronic transport are not completely understood. Here we…
Boltzmann transport theory fails near the linear band-crossing of single-layer graphene and near the quadratic band-crossing of bilayer graphene. We report on a numerical study which assesses the role of inter-band coherence in transport…
The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties…
We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moir\'{e} heterostructure with a moir\'{e} wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning…
Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics…
The superconducting (SC) state of magic-angle twisted bilayer graphene (MATBG) shows exceptional properties, as it consists of an unprecedentedly small electron (hole) ensemble of only ~ 10 power 11 carriers per square centimeter, which is…