Related papers: Optical Receiver with Helicity Dependent Switching…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
The ultimate control of magnetic states of matter at femtosecond (or even faster) timescales defines one of the most pursued paradigm shifts for future information technology. In this context, ultrafast laser pulses developed into extremely…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…
Magnetization manipulation in the absence of an external magnetic field is a topic of great interest, since many novel physical phenomena need to be understood and promising new applications can be imagined. Cutting-edge experiments have…
The discovery of all-optical ultra-fast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. Previous studies on single pulse all-optical…
In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faster compared to conventional magnetization dynamics. Among…
Domain wall displacement in Co/Pt thin films induced by not only fs- but also ps-laser pulses is demonstrated using time-resolved magneto-optical Faraday imaging. We evidence multi-pulse helicity-dependent laser-induced domain wall motion…
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without…
Spin-orbit torque provides a powerful means of manipulating domain walls along magnetic wires. However, the current density required for domain wall motion is still too high to realize low power devices. Here we experimentally demonstrate…
With the feature of low-power magnetization manipulation at an ultrashort time scale, all optical switching (AOS) has been propelled to the forefront in investigations. To further speed up the magnetization reversal by manipulating…
The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W,…
Ultrafast non-thermal manipulation of magnetization by light relies on either indirect coupling of the electric field component of the light with spins via spin-orbit interaction or direct coupling between the magnetic field component and…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load,…
Light polarization is one of the most fundamental features, equivalent to energy and coherence. Magnetism changes light polarization, and vice versa. The irradiation of intense circularly polarized femtosecond pules to magnetic materials…
Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…
The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical doping, temperature, or…
Efficient control of a magnetization without an application of the external magnetic fields is the ultimate goal of spintronics. We demonstrate, that in monolayers of $\text{CrI}_3$, magnetization can be switched all optically, by…