Related papers: Ultra-efficient superconducting Dayem bridge field…
Superconductor/metal interfaces are usually fabricated in heterostructures that join these dissimilar materials. A conceptually different approach has recently exploited the strain sensitivity of heavy-fermion superconductors, selectively…
In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a…
We study the Josephson effects in the superconductor/two-dimensional Weyl nodal line semimetal/superconductor junctions using the Green's function method. When the Rashba spin-orbit coupling and an external magnetic field coexist in the…
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…
The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial…
Superconducting tunnel junctions constitute the units of superconducting quantum circuits and are massively used both for quantum sensing and quantum computation. In previous works, we predicted the existence of a nonlinear thermoelectric…
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at…
We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal…
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid…
Josephson junctions are essential devices in superconducting electronics and quantum computing hardware. Here we predict electrical control of the supercurrent in composite superconductor-insulator-ferroelectric-insulator-superconductor…
The physical mechanism of superconductivity is proposed on the basis of carrier-induced dynamic strain effect. By this new model, superconducting state consists of the dynamic bound state of superconducting electrons, which is formed by the…
Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several mechanisms such as magneto-chiral effects, finite momentum Cooper pairing, asymmetric edge…
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting…
Superconductor-ferromagnet-superconductor Josephson junctions are known to exist in the $0$ and $\pi$ states with the transitions between them controlled by the temperature and ferromagnetic interlayer thickness. We demonstrate that these…
A comprehensive first principles study on the electronic topological transition in a number of 122 family of Fe based superconductors is presented. Doping as well as temperature driven Lifshitz transitions are found from first principles…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…