Related papers: Coherent electron transport in silicon quantum dot…
We investigate coherent electron-switching transport in a double quantum waveguide system in a perpendicular static or vanishing magnetic field. The finite symmetric double waveguide is connected to two semi-infinite leads from both ends.…
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
Quantum dots are nanoscopic systems, where carriers are confined in all three spatial directions. Such nanoscopic systems are suitable for fundamental studies of quantum mechanics and are candidates for applications such as quantum…
Semiconductor hole-spin qubits offer a promising route to quantum computation due to their weak hyperfine interaction, and strong intrinsic spin-orbit coupling enabling electric control of qubits. Scalable architectures, however, require…
Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…
The role of spin is investigated in the transport through a quantum dot with two overlapping resonances (one having a width larger than the level separation and the other very narrow, cf. Silvestrov and Imry, Phys. Rev. Lett. {\bf 85}, 2565…
Prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of…
We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third or fourth dot. We…
The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled…
Two-electron charged self-assembled quantum dot molecules exhibit a decoherence-avoiding singlet-triplet qubit subspace and an efficient spin-photon interface. Here, we demonstrate that the cycling transitions originating from auxiliary…
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double…
We investigate the influence of dissipation on one- and two-qubit rotations in coupled semiconductor quantum dots, using a (pseudo) spin-boson model with adiabatically varying parameters. For weak dissipation, we solve a master equation,…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…