Related papers: Integration of external electric fields in molecul…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…
In this work, we investigate the underlying physical mechanism for electric-field induced resistive switching in Au/MoS2/Au based memristive devices by combining reactive Molecular Dynamics (MD) and ab-initio quantum transport calculations.…
We present a theoretical model of spin transitions in stacks of molecular layers. Our model captures the already established physics of these systems (thermal hysteretic transitions and crossovers) and suggests a way towards in situ control…
In recent years, several artificial molecular motors driven and controlled by electric currents have been proposed. Similar to Brownian machines, these systems work by turning random inelastic tunneling events into a directional rotation of…
A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density…
Atomic Force Microscopy (AFM) combined with electrical modes provides a powerful contactless approach to characterize material electrical properties at the nanoscale. However, conventional electrostatic models often overlook dynamic charge…
The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…
In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Molecular dynamics simulations are an important tool for describing the evolution of a chemical system with time. However, these simulations are inherently held back either by the prohibitive cost of accurate electronic structure theory…
Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated in terms of semiconductor and ionic…
The plasma-material interactions present in multiple fusion and propulsion concepts between the flow of plasma through a channel and a material wall drive the emission of secondary electrons. This emission is capable of altering the…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
A molecular dynamics (MD) simulation is used to quantitatively analyze the induced membrane potential for an applied external field varied between 0.4 V/nm to 2.0 V/nm. The change in the electrostatic potential in the DPPC is directly…
Transition metal complexes for photochemical applications often feature a high density of electron-vibrational states characterized by nonadiabatic and spin-orbit couplings. Overall, the dynamics after photoexcitation is shaped by rapid…