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A theoretical model is presented for low-frequency magnetoelectric (ME) effects in bilayers of magnetostrictive and piezoelectric phases. A novel approach, the introduction of an interface coupling parameter k, is proposed for the…
In this paper, we present techniques and examples to reduce power consumption and increase energy efficiency of autonomous Wireless Sensor Nodes (WSNs) for the Internet of Things. We focus on the RF Energy Harvester (RFEH), the data…
Magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
This article presents a hardware platform including stimulating implants wirelessly powered and controlled by a shared transmitter (TX) for coordinated leadless multisite stimulation. The adopted novel single-TX, multiple-implant structure…
The emergence of reconfigurable intelligent surfaces (RISs) enables us to establish programmable radio wave propagation that caters for wireless communications, via employing low-cost passive reflecting units. This work studies the…
Magnetoelectric (ME) magnetic field sensors commonly rely on one of the two modulation principles: the nonlinear dependence of magnetostrictive strain on the applied field or the stress-induced change in magnetization susceptibility. While…
Voltage-driven 180$^\circ$ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180$^\circ$ magnetization switching at room…
Magnetic refrigeration (MR) based on the magnetocaloric effect (MCE) is a promising alternative to conventional vapor compression refrigeration techniques. The cooling efficiency of a magnetic refrigerator depends on its refrigeration…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
Low frequency magnetoelectric (ME) coupling has been investigated in bulk and multilayers of cobalt zinc ferrite, Co1-xZnxFe2O4 (x=0-0.6), and lead zirconate titanate. In bulk samples, the transverse and longitudinal couplings are weak and…
Massive multi-input multi-output (MIMO) can support high spectral efficiency (SE) with simple linear transceivers, and is expected to provide high energy efficiency (EE). In this paper, we analyze the EE of downlink multi-cell massive MIMO…
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…
This paper reports the first demonstration of a magnet-free, high performance microelectromechanical system (MEMS) based circulator. An innovative circuit based on the commutation of MEMS resonators with high quality (Q) factor using RF…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
Mobile edge computing (MEC) has been regarded as a promising technique to support latencysensitivity and computation-intensive serves. However, the low offloading rate caused by the random channel fading characteristic becomes a major…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…
As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…