Related papers: Low current Hall Effect Sensor
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit…
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents and voltages in the short FET channels are determined. The…
A variational approach is used in order to study the stationary states of Hall devices. Charge accumulation, electric potentials and electric currents are investigated on the basis of the Kirchhoff-Helmholtz principle of least heat…
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects.…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted…
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…
In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is…
Weak measurement is an important technique for detecting the tiny spin-dependent splitting in photonic spin Hall effect. The weak measurement is only valid when the probe wavefunction remains almost undisturbed during the procedure of…
We present a high-sensitivity microwave vector detection system for studying the low-dimensional electron system embedded in the gaps of a coplanar waveguide at low temperatures. Using this system, we have achieved 0.005% and…
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths…
Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a 2D electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH…
Non-classical electron diffusion in crossed-field, low-temperature plasmas is measured experimentally. Laser-induced fluorescence and Thomson scattering are used to determine the inverse Hall parameter, a metric for cross-field transport,…
Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been…
The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has…
The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as…