Related papers: Low current Hall Effect Sensor
We present the concept of magnetic gas detection by the Extraordinary Hall effect (EHE). The technique is compatible with the existing conductometric gas detection technologies and allows simultaneous measurement of two independent…
The detection of weak forces is a central problem in physics and engineering, ranging in importance from fundamental pursuits such as precision tests of gravity, gravitational-wave detection, and searches for dark matter, to applications…
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have…
The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such…
The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…
We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic…
A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74…
The heavy fermion systems present a unique platform in which strong electronic correlations give rise to a host of novel, and often competing, electronic and magnetic ground states. Amongst a number of potential experimental tools at our…
The Hall effects comprise one of the oldest but most vital fields in condensed matter physics, and they persistently inspire new findings, such as quantum Hall effects and topological phases of matter. The recently discovered nonlinear Hall…
Sensing the motion of physical objects in an environment enables numerous applications, from tracking occupancy in buildings and monitoring vital signs to diagnosing faults in machines. Typically, these application scenarios involve…
Hall effects have been employed as sensitive detectors of magnetic fields and magnetizations. In spintronics, exotic phenomena often emerge from a non-equilibrium spin polarization or magnetization, that is very difficult to measure…
The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron…
Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a…
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $\mu \approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we…
The Hall conductivity and resistivity of strongly localized electrons at low temperatures and at small magnetic fields are obtained. It is found that the results depend on whether the conductivity or the resistivity tensors are averaged to…
Measurements of the transverse Hall resistance are widely used to investigate electron transport, magnetization phenomena, and topological quantum states. Owing to the difficulty of probing transient changes of the transverse resistance,…