Related papers: Chemically stabilized epitaxial wurtzite-BN thin f…
For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these…
The linear dispersion relation for longwave surface perturbations, as derived by Levine et al. Phys. Rev. B 75, 205312 (2007) is extended to include a smooth surface energy anisotropy function with a variable anisotropy strength (from weak…
We report synthesis of phase pure multiferroic YMnO3 thin films on sapphire (0001)with conducting ZnGaO buffer contact layer. Films were prepared by using pulsed laser deposition technique and characterized using x-ray diffraction(XRD),…
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial…
In this article we study a model from epitaxial thin-film growth. It was originally introduced as a phenomenological model of growth in the presence of a Schwoebbel barrier, where diffusing particles on a terrace are not allowed to jump…
Gaining insight into the characteristics of epitaxial complex oxide films is essential to control the behavior of devices and catalytic processes. It is known that substrate induced strain, doping, and layer growth can affect the electronic…
The structural, magnetic and dielectric properties have been investigated in 3$d$-5$d$ based double perovskite Sr$_2$FeIrO$_6$ thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are…
In this work thin magnetite films were deposited on SrTiO$_3$ via reactive molecular beam epitaxy at different substrate temperatures. The growth process was monitored in-situ during deposition by means of x-ray diffraction. While the…
In the present work we study the growth by pulsed laser deposition of YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) films on the r-cut sapphire substrates. To improve the matching of the lattice parameters between the substrate and the film we use…
Epitaxial films have the potential to be used as model systems for fundamental investigations on the martensitic transformation in binary NiTi. In this paper, we discuss growth of binary NiTi thin films on single crystalline MgO substrates.…
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties…
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…
BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2…
As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct…
Wurtzite boron nitride (wBN) is a polymorph of boron nitride and serves as an intermediate phase in the transition from hBN to cBN under high pressure and temperature conditions. Owing to these extreme synthesis conditions, wBN likely…
We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak…
We report the physical properties of Co$_2$CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in $\theta$-2$\theta$ mode showed the…
We report the synthesis and characterization of thin films of the Weyl semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the appropriate substrate, we can stabilize the growth of NbAs in the (001) and (100)…
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and…
Coherent epitaxial growth allows to produce crystalline films with strained structures which are unstable in the bulk. Thereby, the relationship between the lattice parameters of the overlayer in the interface plane, $(a,b)$, and its…