Related papers: Hole Mobility Model for Si Double-Gate Junctionles…
Bi$_2$O$_2$Se is an emerging high-performance layered semiconductor with excellent stability. While experimental studies have explored carrier transport across various doping levels for both $n$-type and $p$-type conduction, a comprehensive…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…
We investigate the spectral properties of a hole moving in a two-dimensional Hubbard model for strongly correlated t_2g electrons. Although superexchange interactions are Ising-like, a quasi-one-dimensional coherent hole motion arises due…
The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson equation, solved in the cross section of the NW. Upon…
A simple band model using higher order non-parabolic effect was adopted for single layer molybdenum tungsten alloy disulfide (i.e., $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$). The first-principles method considering $2\times2$ supercell…
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…
Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the…
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…
Conductivities and Hall coefficients of two dimensional hard core bosons are calculated using the thermodynamic expansions of Kubo formulas. At temperatures above the superfluid transition, the resistivity rises linearly and is weakly…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
We study a tight binding model including both on site disorder and coupling of the electrons to randomly oriented magnetic moments. The transport properties are calculated via the Kubo-Greenwood scheme, using the exact eigenstates of the…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination…
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband…
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has…
The non-commutative theory of charge transport in mesoscopic aperiodic systems under magnetic fields, developed by Bellissard, Shulz-Baldes and collaborators in the 90's, is complemented with a practical numerical implementation. The…