Related papers: Ultrafast terahertz detectors based on three-dimen…
Strong-field mid-infrared pump--terahertz (THz) probe spectroscopy has been proven as a powerful tool for light control of different orders in strongly correlated materials. We report the construction of an ultrafast broadband infrared…
Terahertz time-domain spectroscopy (THz-TDS) is a non-invasive, non-contact and label-free technique for biological and chemical sensing as THz-spectra is less energetic and lies in the characteristic vibration frequency regime of proteins…
The development of wearable devices for terahertz (THz) integrated sensing and communication (ISAC) is pivotal for forthcoming 6G Internet of Things (IoT) and wearable optoelectronics. However, existing THz system suffers from bulkiness,…
The ever-increasing demand for high-speed data transmission continues to motivate research and development efforts towards the sixth generation (6G) of wireless communication technologies and beyond. The use of terahertz (THz) carrier…
Inspired by the capability of structured illumination microscopy in subwavelength imaging, many researchers devoted themselves to investigating this methodology. However, due to the free propagating feature of the traditional structured…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…
Terahertz communications is a promising modality for future short-range point-to point wireless data transmission at rates up to terabit per second. A milestone towards this goal is the development of an integrated transmitter and receiver…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to…
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…
A superconducting microstrip half-wavelength resonator is proposed as a suitable band-pass filter for broadband moderate spectral resolution spectroscopy for terahertz (THz) astronomy. The proposed filter geometry has a free spectral range…
We present a mid-IR ($\lambda \approx$ 8.3 $\mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate.…
The low flux infrared imaging needs performant high wavelength detectors. Quantum Well Infrared Photodetectors (QWIP), thanks to the maturity of GaAs, the possibility to adjust the detected wavelength on a large range and to realize large…
Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive…
The scarcity of spectrum resources in current wireless communication systems has sparked enormous research interest in the terahertz (THz) frequency band. This band is characterized by fundamentally different propagation properties…
The implementation of terahertz (THz) wafer-level metadevices is critical to advance the science for applications including (I) integrated focal plane array which can image for biology and (II) integrated narrowband absorbers for high…
Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…
Terahertz communications are envisioned as a key technology for 6G, which requires 100+ Gbps data rates, 1-millisecond latency, among other performance metrics. As a fundamental wireless infrastructure, the THz communication can boost…
Terahertz (THz)-based electron manipulation has recently been shown to hold tremendous promise as a technology for manipulating and driving the next-generation of compact ultrafast electron sources. Here, we demonstrate an ultrafast…