Related papers: Gallium phosphide-on-silicon dioxide photonic devi…
Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high…
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field…
We report an integrated platform for efficient second-order nonlinear interactions based on linearly uncoupled resonators and angular phase matching. The proposed architecture confines phase control to a limited section of the device,…
The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge…
Confining photons in a finite volume is in high demand in modern photonic devices. This motivated decades ago the invention of photonic crystals, featured with a photonic bandgap forbidding light propagation in all directions. Recently,…
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…
Large-scale integrated quantum photonic technologies will require the on-chip integration of identical photon sources with reconfigurable waveguide circuits. Relatively complex quantum circuits have already been demonstrated, but few…
We demonstrate second order optical nonlinearity in aluminum nitride on insulator substrates. Using sputter-deposited aluminum nitride thin films we realize nanophotonic waveguides coupled to micro-ring resonators that simultaneously…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural…
Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables…
A novel photonic thermal diode concept operating in the near field and capitalizing on the temperature-dependence of coupled surface polariton modes in nanostructures is proposed. The diode concept utilizes terminals made of the same…
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically…
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…
High-frequency sine wave gating (SWG) InGaAs/InP single-photon detectors (SPDs) are widely used for synchronous near-infrared single-photon detection. For practical use, the size of SPD is one of the most concerning features for system…
Using photonic devices, we developed a new approach to traditional spectroscopy where the spectral cross-correlation with a template spectrum can be done entirely on-device. By creating photonic devices with a carefully designed, modulated…
$\beta$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…