Related papers: Molecular beam epitaxy and defect structure of Ge …
We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam…
Crystalline Fe3O4/NiO bilayers were grown on MgO(001) substrates using reactive molecular beam epitaxy to investigate their structural properties and their morphology. The film thickness either of the Fe3O4 film or of the NiO film has been…
Iron(II) monoxide (FeO) is thermodynamically stable in the halite (w\"ustite) structure only at elevated temperatures in a typically non-stoichiometric, Fe-deficient, Fe$_{1-z}$O form that tends to phase separate and/or transform into…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In this work, we synthesize heteroepitaxial thin films of…
The ability to synthesis well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in-situ can greatly advance our current understanding on their physical and chemical properties. In…
Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators…
Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as the hexagonal (2H) and distorted octahedral or monoclinic (1T') phases. The different structures show vastly different properties. For example, the 2H MoTe2…
Electronic and structural properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of spin-resolved photoelectron spectroscopy, Auger-electron spectroscopy, and low energy electron…
Epitaxial films of heavy fermion CeCu2Ge2 and CeFe2Ge2 are grown on DyScO3 and MgO substrates using molecular beam epitaxy. The growth begins via island nucleation leading to a granular morphology. The grains grow flat with c-axis…
We have investigated the Co-doping dependence of the structural, transport, and magnetic properties of \epsilon-FeCoSi epilayers grown by molecular beam epitaxy on silicon (111) substrates. Low energy electron diffraction, atomic force…
Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical.…
Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material…
Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane…
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and…
GaAs nanowires were grown by molecular beam epitaxy on Si(100) substrates covered with 5 nm SiO2. The growth was performed with As4 at low, close to stoichiometric, As4/Ga flux ratio, using Ga nanodroplets as catalyst. The nanowires are…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for…
We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam…
We report epitaxial growth of $\beta$-Ag2Te thin films by molecular beam epitaxy. $\beta$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at…