Related papers: Monolithic quantum-dot distributed feedback laser …
Although nanolasers typically have low Q-factors and high lasing thresholds, they have been successfully implemented with various gain media. Intuitively, it seems that an increase in the gain coefficient would improve the characteristics…
This study proposes and experimentally demonstrates a distributed feedback (DFB) laser with a distributed phase shift (DPS) region at the center of the DFB cavity. By modeling the field intensity distribution in the cavity and the output…
In this work, a design for a mid-infrared quantum cascade laser (QCL) frequency comb source that enhances the high frequency response and the comb characteristics of the device is presented . A state-of-the-art active region (AR), grown on…
A room temperature operating Vertical External Cavity Surface Emitting Laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by time-resolved Fourier transform interferometry. At an equivalent pathlength of…
On-chip erbium-doped optical amplifiers and lasers are essential for realizing fully integrated active silicon photonic circuits, but their performance has been limited by the low gain of amorphous host materials and the difficulty of…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
We report on the fabrication of three-dimensional (3D) high-Q whispering gallery microcavities on a fused silica chip by femtosecond laser microfabriction, enabled by the 3D nature of femtosecond laser direct writing. The processing mainly…
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to…
Quasi-bound states in the continuum (q-BICs) enable low-threshold lasing through high-Q cavity modes, yet their polarization tunability remains constrained by nanostructure-imposed cavity symmetries. By engineering a microcavity with an…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
Single-cavity dual-comb lasers are a new class of ultrafast lasers which have a wide possible application space including pump-probe sampling, optical ranging, and gas absorption spectroscopy. However, to this date laser cavity multiplexing…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…
Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency…
The third-order non-linearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in…
A 1632-nm laser has highly important applications in interfacing the wavelength of rubidium-based quantum memories (795 nm) and the telecom band (typically 1550 nm) by frequency conversion in three-wave mixing processes. A 1632-nm laser…
Phase-locking an array of quantum cascade lasers is an effective way to achieve higher output power and beam shaping. In this article, based on Talbot effect, we show a new-type phase-locked array of mid-infrared quantum cascade lasers with…
A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities…
Terahertz sources based on intra-cavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically-pumped semiconductor sources capable of operating at…