Related papers: Analytical Modeling of Metal Gate Granularity base…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
Variational quantum eigensolvers (VQEs) are leading candidates to demonstrate near-term quantum advantage. Here, we conduct density-matrix simulations of leading gate-based VQEs for a range of molecules. We numerically quantify their level…
In applying Vibration-Transit (V-T) theory of liquid dynamics to the thermodynamic properties of monatomic liquids, the point has been reached where an improved model is needed for the small (approx. 10%) transit contribution. Toward this…
A precise determination of the bubble wall velocity $v_w$ is crucial for making accurate predictions of the baryon asymmetry and gravitational wave (GW) signals in models of electroweak baryogenesis (EWBG). Working in the local thermal…
High-fidelity logical \emph{T}-gate realization constitutes a core prerequisite for large-scale fault-tolerant quantum computing. However, conventional magic state distillation requires massive physical qubit overhead across successive…
The structure factor is a useful observable for probing charge density correlations in real materials, and its long-wavelength behavior encapsulated by ``quantum weight'' has recently gained prominence in the study of quantum geometry and…
A new semi-analytic model of the metal rolling process is introduced, which, for the first time, is able to predict the through-thickness stress and strain oscillations present in long thin roll-gaps. The model is based on multiple-scales…
In randomized benchmarking of quantum logical gates, partial twirling can be used for simpler implementation, better scaling, and higher accuracy and reliability. For instance, for two-qubit gates, single-qubit twirling is easier to realize…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
Learning-based 3D reconstruction models, represented by Visual Geometry Grounded Transformers (VGGTs), have made remarkable progress with the use of large-scale transformers. Their prohibitive computational and memory costs severely hinder…
Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are…
We present a compact model for Tunnel Field Effect Transistors (TFET), that captures sev- eral non-idealities such as the Trap Assisted Tunneling (TAT) originating from interface traps (Dit), along with Verilog-A implementation. We show…
Achieving very fast gates that undercut the natural limits set by decoherence requires going into the strong driving limit. Realizing single-qubit control predicted beyond semi-classical, time-dependent modeling has yet to be experimentally…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
The training of a parameterized model largely depends on the landscape of the underlying loss function. In particular, vanishing gradients are a central bottleneck in the scalability of variational quantum algorithms (VQAs), and are known…
Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of…
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…
Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…
Large scale integration of distributed energy resources and electric vehicles in a transactive energy environment present new challenges in terms of voltage stability and fluctuations in a power distribution system. The impact of different…
Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…