Quantifying the effect of gate errors on variational quantum eigensolvers for quantum chemistry
Abstract
Variational quantum eigensolvers (VQEs) are leading candidates to demonstrate near-term quantum advantage. Here, we conduct density-matrix simulations of leading gate-based VQEs for a range of molecules. We numerically quantify their level of tolerable depolarizing gate-errors. We find that: (i) The best-performing VQEs require gate-error probabilities between and ( and with error mitigation) to predict, within chemical accuracy, ground-state energies of small molecules with orbitals. (ii) ADAPT-VQEs that construct ansatz circuits iteratively outperform fixed-circuit VQEs. (iii) ADAPT-VQEs perform better with circuits constructed from gate-efficient rather than physically-motivated elements. (iv) The maximally-allowed gate-error probability, , for any VQE to achieve chemical accuracy decreases with the number of noisy two-qubit gates as . Additionally, decreases with system size, even with error mitigation, implying that larger molecules require even lower gate-errors. Thus, quantum advantage via gate-based VQEs is unlikely unless gate-error probabilities are decreased by orders of magnitude.
Cite
@article{arxiv.2211.04505,
title = {Quantifying the effect of gate errors on variational quantum eigensolvers for quantum chemistry},
author = {Kieran Dalton and Christopher K. Long and Yordan S. Yordanov and Charles G. Smith and Crispin H. W. Barnes and Normann Mertig and David R. M. Arvidsson-Shukur},
journal= {arXiv preprint arXiv:2211.04505},
year = {2024}
}
Comments
25 pages, 8 figures