Related papers: Improving DRAM Performance by Parallelizing Refres…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

This article summarizes the idea of "refresh-access parallelism," which was published in HPCA 2014, and examines the work's significance and future potential. The overarching objective of our HPCA 2014 paper is to reduce the significant…

This paper summarizes the idea of Subarray-Level Parallelism (SALP) in DRAM, which was published in ISCA 2012, and examines the work's significance and future potential. Modern DRAMs have multiple banks to serve multiple memory requests in…

Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…

DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interfering with memory accesses. As DRAM chip density increases with…

Many convolutional neural network (CNN) accelerators face performance- and energy-efficiency challenges which are crucial for embedded implementations, due to high DRAM access latency and energy. Recently, some DRAM architectures have been…

Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…

This paper studies the impact of DRAM writes on DDR5-based system. To efficiently perform DRAM writes, modern systems buffer write requests and try to complete multiple write operations whenever the DRAM mode is switched from read to write.…

With lowering thresholds, transparently defending against Rowhammer within DRAM is challenging due to the lack of time to perform mitigation. Commercially deployed in-DRAM defenses like TRR that steal time from normal refreshes~(REF) to…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Modern multicore system-on-chips (SoCs) share off-chip DRAM across cores, where bank-level interference can significantly degrade performance and threaten real-time guarantees. While prior work has focused on per-core bandwidth regulation,…

This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…

Modern commercial-off-the-shelf (COTS) multicore processors have advanced memory hierarchies that enhance memory-level parallelism (MLP), which is crucial for high performance. To support high MLP, shared last-level caches (LLCs) are…

As DRAM density increases, Rowhammer becomes more severe due to heightened charge leakage, reducing the number of activations needed to induce bit flips. The DDR5 standard addresses this threat with in-DRAM per-row activation counters…

DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

As memory technologies continue to shrink and memory error rates increase, the demand for stronger reliability becomes increasingly critical. Fine-grain memory replication has emerged as an appealing approach to improving memory fault…