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Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

Mesoscale and Nanoscale Physics · Physics 2019-08-20 Abhishek Sharma , Ashwin Tulapurkar , Bhaskaran Muralidharan

Tunneling two level systems affect damping, noise and decoherence in a wide range of devices, including nanoelectromechanical resonators, optomechanical systems, and qubits. Theoretically this interaction is usually described within the…

Mesoscale and Nanoscale Physics · Physics 2022-01-19 T. Kamppinen , J. T. Mäkinen , V. B. Eltsov

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

Mesoscale and Nanoscale Physics · Physics 2022-04-15 Shengjie Shi , R. A. Buhrman

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…

The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Soumik Mukhopadhyay , I. Das

Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Bogdan R. Bulka

Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…

In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is…

Materials Science · Physics 2009-11-13 T. Nagahama , T. S. Santos , J. S. Moodera

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

We solve Schr\"odinger equation describing a tunneling macrospin coupled to a torsional oscillator. Energy spectrum is studied for various quantum regimes. Magnetic susceptibility and noise spectrum are computed. We show that entanglement…

Mesoscale and Nanoscale Physics · Physics 2012-01-10 D. A. Garanin , E. M. Chudnovsky

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Soumik Mukhopadhyay , I. Das

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…

Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation…

Materials Science · Physics 2015-05-13 M. Schäfers , V. Drewello , G. Reiss , A. Thomas , K. Thiel , G. Eilers , M. Münzenberg , H. Schuhmann , M. Seibt

We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Kai-He Ding , Zhen-Gang Zhu , Jamal Berakdar

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Materials Science · Physics 2015-03-13 M. Carpentieri , R. Tomasello , M. Ricci , P. Burrascano , G. Finocchio

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…

Materials Science · Physics 2007-09-25 Casey W. Miller , Zhi-Pan Li , Ivan K. Schuller , R. W. Dave , J. M. Slaughter , Johan Akerman

We consider multi-terminal transport through a flake of rectangular shape of a two-dimensional topological insulator in the presence of an in-plane magnetic field. This system has been shown to be a second-order topological insulator, thus…

Mesoscale and Nanoscale Physics · Physics 2024-02-21 Joseph Poata , Fabio Taddei , Michele Governale

In (S/F) hybrids the suppression of superconductivity by the exchange field h_ex of the ferromagnet can be partially lifted when different directions of h_ex are sampled simultaneously by the Cooper pair. In F/S/F trilayer geometries where…

Superconductivity · Physics 2009-11-10 A. Yu. Rusanov , M. Hesselberth , J. Aarts , A. I. Buzdin

We investigate the dependence of switching current density on the junction sizes in the spin transfer torque nanopillar structures by using micromagnetic simulations. While the macro spin model predicts weak dependence of switching current…

Materials Science · Physics 2015-06-12 Chun-Yeol You , Myung-Hwa Jung