Related papers: Finite Size Effects in Highly Scaled Ruthenium Int…
The structure and the magnetic properties of layered Li3Cu2SbO6 are investigated by powder X-ray diffraction, static susceptibility, and electron spin resonance studies up to 330 GHz. The XRD data experimentally verify the space group C2/m…
Reconfigurable Intelligent Surface (RIS) can create favorable multipath to establish strong links that are useful in millimeter wave (mmWave) communications. While previous works used Rayleigh or Rician fading, we use the fluctuating…
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional…
The miniaturization of electronic devices has led to the prominence, in technological applications, of semiconductor thin films that are only a few nanometers thick. In spite of intense research, the thickness-dependent resistivity or…
A quasiclassical theory of giant magnetoresistance in nanoscale point contacts between different ferromagnetic metals is developed. The contacts were sorted by three types of mutual positions of the conduction spin-subband bottoms which are…
We present a numerical model for the prediction of the rough contact mechanics of a viscoelastic block, with graded rheology, in steady sliding contact with a randomly rough rigid surface. In particular, we derive the effective surface…
We propose a new method to estimate the critical index $t$ for strength of networks of random fused conductors. It relies on a recently introduced expression for their yield strength. We confirm the results using finite size scaling. To…
Some new members of a Ruthenocuprate (2212) series have been synthesized by Mn substitution for Ru in Gd1.4Ce0.6Sr2RuCu2O10 . Characterisation by XRD phase analysis followed by Rietveld refinement has been carried out. IR spectroscopy…
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…
We studied random resistor networks produced with regular structure and random distribution of edge conductances. These networks are intended to mimic crack-template-based transparent conductive films as well some random networks produced…
A parameter free calculation of the resistivity is applied to liquid metals near the melting point ranging from weak to strong scattering limit. The method is based on length dependent resistance calculations for quasi-one dimensional…
Using detailed simulations we investigate the magnetic response of metamaterials consisting of pairs of parallel slabs or combinations of slabs with wires (including the fishnet design) as the length-scale of the structures is reduced from…
Metasurfaces leveraging nonlocal resonances enable narrowband spectral control and strong near-fields, with applications spanning augmented reality, biosensing, and nonlinear optics. However, the large spa- tial extent of these modes also…
We have studied the electrical conductance of two-dimensional (2D) random percolating networks of zero-width metallic nanowires (a mixture of rings and sticks). We toke into account the nanowire resistance per unit length and the junction…
We examined in this work the effect of the inter-grains distributions as well as the scaling of the complex impedance in order to analyze its frequency dependance for composite metal-insulator films. The dependance of the characteristic…
The miniaturization of electronic devices brings severe challenges in the deposition of metal interconnects in back end of line processing due to a continually decreasing volume available for metal deposition in the interconnect via. Cu is…
Microwave properties of High Temperature Superconductors (HTS) exhibit dependence on RF power levels. Effects of nonlinear phenomena causing this dependence can be modelled using lumped element circuits. Several RLC circuits to model the…
The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance…
Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their…
Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated…