Related papers: A two-channel model for Spin-relaxation noise
We present a general phenomenological model for superconducting qubits subject to noise produced by two-state fluctuators whose couplings to the qubit are all roughly the same. In flux qubit experiments where the working point can be…
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…
We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose…
The noise of signals or currents consisting from a sequence of pulses, elementary events or moving discrete objects (particles) is analyzed. A simple analytically solvable model is investigated in detail both analytically and numerically.…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…
The small amplitude perturbations of spins are considered in the four component antiferromagnetic materials with the equilibrium state of form up-up-down-down (uniaxial samples). Other configurations for the four component antiferromagnetic…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We demonstrate a method to obtain the spectra of $1/f$ noises in spin-qubit devices from randomized benchmarking, assisted by supervised learning. The noise exponent, which indicates the correlation within the noise, is determined by…
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in…
The two spin-channel model is generalized to the case of transport of ferromagnetic excitations in electric conductors and insulators. The two channels are defined by reducing the ferromagnetic degrees of freedom to a bivaluated variable,…
Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured…
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $\mu$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized…
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an…
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
We develop a theory of spin noise in semiconductor nanowires considered as prospective elements for spintronics. In these structures spin-orbit coupling can be realized as a random function of coordinate correlated on the spatial scale of…
The current noise in a classical one-dimensional charge density wave system is studied in the weak pinning regime by solving the overdamped equation of motion numerically. At low temperatures and just above the zero temperature depinning…
We study the dynamics of dephasing in a quantum two-level system by modeling both 1/f and high-frequency noise by random telegraph processes. Our approach is based on a so-called spin-fluctuator model in which a noisy environment is modeled…
Theory of spin noise in low dimensional systems and bulk semiconductors is reviewed. Spin noise is usually detected by optical means, continuously measuring the rotation angle of the polarization plane of the probe beam passing through the…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…