Related papers: Errors in Flash-Memory-Based Solid-State Drives: A…
NAND flash-based Solid State Drives (SSDs), which are widely used from embedded systems to enterprise servers, are enhancing performance by exploiting the parallelism of NAND flash memories. To cope with the performance improvement of SSDs,…
Hybrid Solid-State Drives (SSDs), which integrate several types of flash cells (e.g., single-level cell (SLC) and multiple-level cell (MLC)) in a single drive and enable them to convert between each other, are designed to deliver both high…
The growing demand for efficient cloud storage solutions has led to the widespread adoption of Solid-State Drives (SSDs) for caching in cloud block storage systems. The management of data writes to SSD caches plays a crucial role in…
This work investigates a new erase scheme in NAND flash memory to improve the lifetime and performance of modern solid-state drives (SSDs). In NAND flash memory, an erase operation applies a high voltage (e.g., > 20 V) to flash cells for a…
In recent years, information retrieval algorithms have taken center stage for extracting important data in ever larger datasets. Advances in hardware technology have lead to the increasingly wide spread use of flash storage devices. Such…
Traditional hard drives consisting of spinning magnetic media platters are becoming things of the past as with the emergence of the latest digital technologies and electronic equipment, the demand for faster, lighter, and more reliable…
This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…
Today, flash memory are strongly used in the embedded system domain. NAND flash memories are the building block of main secondary storage systems. Such memories present many benefits in terms of data density, I/O performance, shock…
RAID proposal advocated replacing large disks with arrays of PC disks, but as the capacity of small disks increased 100-fold in 1990s the production of large disks was discontinued. Storage dependability is increased via replication or…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Solid-state storage architectures based on NAND or emerging memory devices (SSD), are fundamentally architected and optimized for both reliability and performance. Achieving these simultaneous goals requires co-design of memory components…
SSDs are currently replacing magnetic disks in many application areas. A challenge of the underlying flash technology is that data cannot be updated in-place. A block consisting of many pages must be completely erased before a single page…
Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory…
Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory,…
This is a followup to the 1994 tutorial by Berkeley RAID researchers whose 1988 RAID paper foresaw a revolutionary change in storage industry based on advances in magnetic disk technology, i.e., replacement of large capacity expensive disks…
Fault tolerance in multi-core architecture has attracted attention of research community for the past 20 years. Rapid improvements in the CMOS technology resulted in exponential growth of transistor density. It resulted in increased…
In recent years, high availability and reliability of Data Storage Systems (DSS) have been significantly threatened by soft errors occurring in storage controllers. Due to their specific functionality and hardware-software stack, error…
Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this issue, this…