Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory, we observe that reading a page incurs heterogeneous reliability impacts on each WL, which makes the existing block-level read reclaim extremely inefficient. We propose a new WL-level read-reclaim technique, called STRAW, which keeps track of the accumulated read-disturbance effect on each WL and reclaims only heavily-disturbed WLs. By avoiding unnecessary read-reclaim operations, STRAW reduces read-reclaim-induced page writes by 83.6\% with negligible storage overhead.
Cite
@article{arxiv.2501.02517,
title = {STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs},
author = {Myoungjun Chun and Jaeyong Lee and Inhyuk Choi and Jisung Park and Myungsuk Kim and Jihong Kim},
journal= {arXiv preprint arXiv:2501.02517},
year = {2025}
}
Comments
Accepted for publication at IEEE Computer Architecture Letters (IEEE CAL), 2024