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Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
We derive the effective charge- and current-density operators for the strong-coupling limit of a single-band Mott insulator in the presence of spin-orbit coupling and show that the spin-orbit contribution to the effective charge density…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Neuromorphic hardware as a non-Von Neumann architecture has better energy efficiency and parallelism than the conventional computer. Here, with numerical modeling spin-orbit torque (SOT) device using current-induced SOT and Joule heating…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…
We fabricated a wedge-shaped Pt/Co/Pt device with perpendicular magnetic anisotropy and manifested that the Co magnetization can be solely switched by spin-orbit torque without any magnetic field. Similar to the synaptic weight, we observed…
In magnetic materials nontrivial spin textures may emerge owing to the competition among different types of magnetic interactions. Among such spin textures, chiral magnetic solitons represent topologically protected spin configurations with…
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic input/output and spin transfer torque (STT) driven…
In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an…
Spintronic devices that utilize the spin degree of freedom of a charge carrier to store, process or transmit information, may be better performers than their traditional electronic counterparts if special properties of "spin" are exploited…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…