Related papers: Coherent spin-transfer precession switching in ort…
Owing to their high magnon frequencies, antiferromagnets are key materials for future high-speed spintronics. Picosecond switching of antiferromagnetic order has been viewed a milestone for decades and pursued only by using ultrafast…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization…
We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…
We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
We report the experimental observation of spin-orbit torque induced switching of perpendicularly magnetized Pt/Co elements in a time resolved stroboscopic experiment based on high resolution Kerr microscopy. Magnetization dynamics is…
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…
Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and…
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger…
We examine the coherence/incoherence transition temperature of a generic molecular spin. Our results demonstrates that a molecular spin with a high coherence/incoherence transition temperature should possess a low spin number and low…
We analyze the statistical distribution of switching durations in spin-transfer switching induced by current steps, and discuss biasing strategies to enhance the reproducibility of switching durations. We use a macrospin approximation and…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of…