Related papers: Magnetoelectric memory function with optical reado…
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…
Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of…
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude…
We report results of joint experimental and theoretical studies on magnetoelectric (ME) compounds Co4Nb2O9 and Co4Ta2O9. On the experimental side, we present results of the magnetization and dielectric permittivity measurements in the…
We show that inducing structural softness in regular magnetoelectric (ME) multiferroics -- i.e., tuning the materials to make their structure strongly reactive to applied fields -- makes it possible to obtain very large ME effects. We…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
Multiferroics are materials where two or more ferroic orders coexist owing to the interplay between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of multiferroics literature in recent years demon-strates the…
Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric…
We have explored the electric field controlled magnetization in the nanodot CoFe2O4/SrRuO3/PMN-PT heterostructures. Ordered ferromagnetic CFO nanodots (~300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
The magnetoelectric (ME) effect traditionally arises from complex spin-orbital interactions in multiferroic materials. In this work, we propose a distinct, intrinsic mechanism for the magnetoelectric effect in quasi-2D magnetic systems that…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
We establish the sign of the linear magnetoelectric (ME) coefficient, $\alpha$, in chromia, Cr$_2$O$_3$. Cr$_2$O$_3$ is the prototypical linear ME material, in which an electric (magnetic) field induces a linearly proportional magnetization…
We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments…
Magnetoelectric multiferroics promise direct cross-control between coexisting ferroelectric and ferromagnetic orders, which is of interest for applications in magnetism and spintronics. A particularly interesting type of cross-control is…
Magnetization can be induced by an electric field in systems without inversion symmetry $\mathcal{P}$ and time-reversal symmetry $\mathcal{T}$. This phenomenon is called the magnetoelectric (ME) effect. The spin ME effect has been actively…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
The lack of both time-reversal and spatial inversion symmetry in polar magnets is a prerequisite for the occurrence of optical magnetoelectric effects such as nonreciprocal directional dichroism with the potential for the realization of…