Related papers: Oscillatory spin-orbit torque switching induced by…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
The aim of the paper is to present a novel class of time-dependent controls to realize ultra-fast magnetization switching in nanomagnets driven by spin-torques produced by spin-polarized electric currents. Magnetization dynamics in such…
A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the…
Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching,…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to…
A simple model of magnetization dynamics in a ferromagnet/doped semiconductor hybrid structure with Rashba spin-orbit interaction (SOI) driven by an applied pulse of the electric field is proposed. The electric current excited by the…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…
Several recent experimental studies have confirmed the possibility of switching the magnetization direction in the small magnetic domains by pumping large spin-polarized currents through them. On the basis of equations proposed by…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…