Related papers: Oscillatory spin-orbit torque switching induced by…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is…
Spin-orbit torques (SOTs) generated in SOT-material/ferromagnet structures are classified as damping-like (DL) and field-like (FL) torques for current-driven magnetization switching. It is well known that both DL- and FL-SOTs originate from…
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar…
Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…
Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…