Related papers: Enhanced Photon Extraction from a Nanowire Quantum…
Quantum dots consisting of an axial Zn0.97Mg0.03Te insertion inside a large bandgap Zn0.9Mg0.1Te nanowire cores are fabricated in a molecular beam epitaxy system by employing the vapor-liquid-solid growth mechanism. Additionally, this…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…
Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs…
In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs are generated as so called hot carriers with an excess energy that is typically lost as heat. The long standing aim to harvest this excess…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a…
Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light…
Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present…
We present the experimental demonstration of a superconducting photon number resolving detector. It is based on the series connection of N superconducting nanowires, each connected in parallel to an integrated resistor. The device provides…
Decoherence is mostly detrimental in quantum information and quantum optics applications. However, the interplay between environment-induced incoherent dynamics and unitary evolution can give rise to novel quantum many-body phenomena that…
The scalability of quantum photonic integrated circuits opens the path towards large-scale quantum computing and communication. To date, this scalability has been limited by the stochastic nature of the quantum light sources. Moreover,…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon…
Micro/nanoscale single photon source is a building block of on-chip quantum information devices. Owing to possessing ultrasmall optical mode volume, plasmon structures can provide large Purcell enhancement, however scattering and absorption…
To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
PbS quantum dots are promising active emitters for use with high-quality Si nanophotonic devices in the telecommunications-band. Measurements of low quantum dot densities are limited both because of low fluorescence levels and the…
Strong light-matter interaction and high-efficiency optical collection of fluorescence from quantum emitters are crucial topics in quantum and nanophotonic fields. High-quality cavities, dispersive photonic crystal waveguides and even…