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We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $\mu$m buried silicon oxide layer using reactive DC magnetron…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
The thermal transport across inorganic/organic interfaces attracts interest for both academic and industry due to its widely applications in flexible electronics etc. Here, the interfacial thermal conductance of inorganic/organic interfaces…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
Quantum coherence in superconducting circuits has increased steadily over the last decades as a result of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic…
Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…
We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO$_3$ and a number of polar cap layers, including LaTiO$_3$, LaAlO$_3$, and GdTiO$_3$.…
We report electrical measurements showing the degradation processes of LaMnO$_{3-y}$ (LaMnO) in LaMnO/normal metal interface in both point contact and planar-type junctions. Immediately after the preparation of the interface, the…
Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the…
We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by the effort to couple magnetic and semiconductor functionality. Nickel-infiltrated and nickel-coated (laminated…
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time…
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane…
We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…
The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of…
Interface chemistry and defect formation in MoS2 thin films grown on single crystal substrates critically determine the electronic structure of MoS2 and thus can strongly modify material functionality relevant for many applications,…
Superconducting thin films and layered crystals display a Nernst signal generated by short-lived Cooper pairs above their critical temperature. Several experimental studies have broadly verified the standard theory invoking Gaussian…
In semiconductor manufacturing processes, silicon dioxide films are commonly used as barrier layers, insulating layers, and protective layers. Coherence scanning interferometry (CSI) offers thin film thickness measurements with a…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter…
Unconventional superconductivity has been suggested to be present at the interface between bismuth and nickel in thin-film bilayers. In this work, we study the structural, magnetic and superconducting properties of sputter deposited Bi/Ni…