Related papers: Thickness Dependent Parasitic Channel Formation at…
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented,…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
We report combined experimental and first principles investigations of hydrogen absorption in epitaxial vanadium films on MgO(001) with nominal thicknesses of 10 nm and 50 nm. In - situ optical transmission and four - probe resistance…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
We measure and model electroadhesion across multi-asperity silicon interfaces with nanometer scale roughness. When electrically biased, our naturally oxidized silicon interfaces display a leakage current consistent with the Fowler-Nordheim…
Transverse thermoelectric power generation has emerged as a topic of immense interest in recent years owing to the orthogonal geometry which enables better scalability and fabrication of devices. Here, we investigate the thickness…
Interface by definition is two-dimensional (2-D) as it separates 2 phases with an abrupt change in structure and chemistry across the interface. The interface between a metal and its nitride is expected to be atomically sharp, as chemical…
Microring resonators enable the enhancement of nonlinear frequency mixing processes, generating output fields at frequencies that widely differ from the inputs, in some cases by more than an octave. The efficiency of such devices depends on…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…
The interplay between substrates and superconducting thin films has attracted increasing attention. Here, we report an in-depth investigation on superconducting properties of the epitaxial TiN thin films grown on three different substrates…
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…
For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads…