Related papers: Room temperature magneto-optic effect in silicon l…
Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the…
The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is…
The magnetoelectric coupling effect serves as a crucial bridge between electrical and magnetic order parameters in condensed matter physics, forming the physical basis for the development of next-generation low-power information storage and…
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
We consider light propagation in a silicon dioxide substrate with implanted ${\mathrm{Er}}^{3+}$ ions and silver nanoparticles that are randomly and homogeneously distributed in the substrate. When their densities are large enough, the…
We have experimentally studied the renormalized effective mass m* and Dingle temperature T_D in two spin subbands with essentially different electron populations. Firstly, we found that the product (m*T_D) that determines damping of quantum…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…
We study the proximity-induced superconductivity effect in a double-stranded DNA by solving the Bogoliubov-de Gennes equations and taking into account the effect of thermal fluctuations of the twist angle between neighboring base pairs. We…
Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
Quasiparticle recombination in a superconductor with an s-wave gap is typically dominated by a phonon bottleneck effect. We have studied how a magnetic field changes this recombination process in metallic thin-film superconductors, finding…
The exchange and correlation $E_{xc}$ of strongly correlated electrons in 2D layers of finite width are studied as a function of the density parameter $r_s$, spin-polarization $\zeta$ and the temperature $T$. We explicitly treat…
In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in…