Related papers: Equivalent Circuit for Magnetoelectric Read and Wr…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Using the techniques of optomechanics, a high-$Q$ mechanical oscillator may serve as a link between electromagnetic modes of vastly different frequencies. This approach has successfully been exploited for the frequency conversion of…
Magnetoelectrics often possess ions located in noncentrosymmetric surroundings. Based on this fact we suggest a microscopic model of magnetoelectric interaction and show that the spin-orbit coupling leads to spin-dependent electric dipole…
We propose a microscopic magneto-electric model in which the coupling between spins and electric dipoles is mediated by lattice distortions. The magnetic sector is described by a spin S=1/2 Heisenberg model coupled directly to the lattice…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Basic multimode impedance analysis grounded in the availability of nonequilibrium charge carriers and their retarded path towards equilibrium is used to access the inadequacy of equivalent circuits in nonlinear systems with inherent memory.…
The equivalent split-circuit formulation is a novel approach that has recently been applied to a range of power system related problems. As a result, a linear and a nonlinear method for power system state estimation with simultaneous…
We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…
Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
This paper proposes a method of transferring physical continuous and switching/converter circuits working in continuous conduction mode (CCM) and discontinuous conduction mode (DCM) to graph representation, independent of the connection or…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
While molecular spin qubits (MSQs) are a promising platform for quantum computing, read-out has been largely limited to electron paramagnetic resonance which is often slow and requires a global system drive. Moreover, because one…
In this work we develop a simple equivalent circuit model (ECM) that predicts the spectral response of a lumped-element loaded single patterned layer reflective metasurface. The proposed ECM maintains accuracy across varying design…
Magnetism governs key properties of materials used in energy, data storage, and spintronic technologies, yet its complex coupling to lattice and electronic degrees of freedom challenges conventional first-principles approaches. We introduce…