Related papers: Electrical spin driving by $g$-matrix modulation i…
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states,…
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly…
Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our…
The realization of electron-spin resonance at the single-atom level using scanning tunneling microscopy has opened new avenues for coherent quantum sensing and quantum state manipulation at the ultimate size limit. This allows to build…
We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
Strong `spin'-orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic field. The strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions, so that the effective…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in…
The $g$-tensor formalism is a powerful method for describing the electrical driving of semiconductor spin qubits. However, up to now, this technique has only been applied to the simplest qubit dynamics, resonant monochromatic driving by a…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
We demonstrate coherent driving of a single electron spin using second harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field…
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum…
A design for a quantum gate performing transformations of a single electron spin is presented. The spin rotations are performed by the electron going around the closed loops in a gated semiconductor device. We demonstrate the operation of…