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Magnetic anisotropy is one of the important factors in determining magnetic structures. A type of magnetic anisotropy is closely related to the symmetry of crystals. We theoretically investigate magnetic anisotropy and its related magnetic…

Strongly Correlated Electrons · Physics 2024-05-22 Akane Inda , Satoru Hayami

For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of…

Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…

Mesoscale and Nanoscale Physics · Physics 2017-02-24 Ioan Tudosa

We investigate submicron ferromagnetic PdNi thin-film strips intended as contact electrodes for carbon nanotube-based spintronic devices. The magnetic anisotropy and micromagnetic structure are measured as function of temperature and aspect…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 D. Steininger , A. K. Huettel , M. Ziola , M. Kiessling , M. Sperl , G. Bayreuther , Ch. Strunk

All the simulations were carried out for sc(001) film with three (N=3) layers. The effect of applied magnetic field and stress induced anisotropy on energy of ultra-thin ferromagnetic films has been investigated using Heisenberg Hamiltonian…

Materials Science · Physics 2016-11-23 P. Samarasekara

We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface…

Low-loss magnetic insulating thin films are promising for information transport via magnons, where isotropic in-plane magnon propagation is desirable. We report nonlocal measurements of electrically and thermally generated magnons in…

$\alpha$-MnTe is an antiferromagnetic semiconductor with above room temperature $T_N$ = 310 K, which is promising for spintronic applications. Recently, it was reported to be an altermagnet, containing bands with momentum-dependent spin…

Materials Science · Physics 2024-10-28 Isaiah Gray , Qinwen Deng , Qi Tian , Michael Chilcote , J. Steven Dodge , Matthew Brahlek , Liang Wu

Dynamic modulation of electromagnetic responses is theoretically examined in dielectric antiferromagnets. While both magneto-electric and magneto-elastic coupling can achieve robust electrical control of magnetic anisotropy, the latter is…

Materials Science · Physics 2023-11-23 Xinyi Xu , Yuriy G. Semenov , Ki Wook Kim

Controllable magnetization in atomically thin two-dimensional magnets is highly desirable for developing spintronics. For FeSe monolayer, its magnetic ground state is not yet fully understood, and the potential in constructing high-speed…

Materials Science · Physics 2024-11-08 Yueqiao Qu , Yu Liao , Zhixiang Wang , Liang Liu , Gang Yao

We simulate antiferromagnetic thin films. Dipole-dipole and antiferromagnetic exchange interactions as well as uniaxial and quadrupolar anisotropies are taken into account. Various phases unfold as the corresponding parameters, J, D and C,…

Statistical Mechanics · Physics 2009-11-11 J. J. Alonso , J. F. Fernandez

In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to…

Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN)…

Materials Science · Physics 2020-08-26 K O'Grady , J Sinclair , K Elphick , R Carpenter , G Vallejo-Fernandez , M I J Probert , A Hirohata

The influence of the in-plane anisotropy on the magnetization of a nanogranular film with perpendicular anisotropy has been studied. It is shown that if a magnetic field is tilted with respect to the film normal, a critical transition from…

Mesoscale and Nanoscale Physics · Physics 2015-01-29 M. M. Kulyk , V. M. Kalita , A. F. Lozenko , S. M. Ryabchenko , O. V. Stognei , A. V. Sitnikov

Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…

Materials Science · Physics 2016-02-17 Dorj Odkhuu , Noejung Park

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…

Single-crystal synchrotron x-ray diffraction studies of CeFeAsO reveal strong anisotropy in the charge correlation lengths along or perpendicular to the in-plane antiferromagnetic (AFM) wave-vector at low temperatures, indicating an…

Superconductivity · Physics 2014-07-08 H. -F. Li , J. -Q. Yan , J. W. Kim , R. W. McCallum , T. A. Lograsso , D. Vaknin

Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…

Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. S. Nunez , R. A. Duine , A. H. MacDonald

We carefully investigated the in-plane magnetic reversal and corresponding magnetic domain structures in Fe/GaAs/piezo-transducer heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the <100> cubic…

Materials Science · Physics 2014-03-12 Y. Y. Li , W. G. Luo , L. J. Zhu , J. H. Zhao , K. Y. Wang
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