Related papers: Magnetic anisotropy in antiferromagnetic hexagonal…
Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400{\deg}C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and…
Simultaneous studies on the magnetic and electrotransport properties of Nd_{0.67} Sr_{0.33} Mn_{1-x} Fe_x O_3 polycrystalline bulk and epitaxial thin films (x = 0.00 and 0.05) have been carried out. A magnetoresistance (MR) as high as ~ 33%…
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance…
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…
In epitaxial (111) oriented Ni$_{80}$Fe$_{20}$/Fe$_{50}$Mn$_{50}$ bilayers, we separate two distinct behaviors: unidirectional anisotropy (exchange bias) in thick Fe$_{50}$Mn$_{50}$, and enhanced coercivity in thin Fe$_{50}$Mn$_{50}$. By…
Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and…
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017…
Magnetic anisotropies of Co-implanted ZnO (0001) films grown on single-crystalline Al2O3 (11-20) substrates have been studied by ferromagnetic resonance (FMR) technique for different cobalt implantation doses. The FMR data show that the…
Stripe domains or any other type domain structures with part of their magnetic moments deviating from the film plane, which usually occur above a certain film thickness, are known problems that limit their potential applications for soft…
In ferromagnetic thin films, the presence of an out-of-plane component of the magnetic anisotropy may induce a transition from planar to stripe-like magnetic domains above a critical thickness, $t_c$. Because of the changes in the domain…
Magnetic anisotropy is a key parameter of magnetic materials as it decides the response in the presence of an external magnetic field. The artificial tailoring of magnetic anisotropy by manipulating surface and interface morphology is…
Antiferromagnetic resonance in a bulk $\alpha$-MnTe crystal is investigated using both frequency-domain and time-domain THz spectroscopy techniques. At low temperatures, an excitation at the photon energy of $(3.5\pm 0.1)$~meV is observed…
Magnetic anisotropy controls the orientational stability and switching properties of magnetic states, and therefore plays a central role in spintronics. First-principles density-functional-theory calculations are able, in most cases, to…
Experiments in the antiferromagnetic phase of a quasi 2D $S=1/2$ quasi-square lattice antiferromagnet Cu(pz)2(ClO4)2 reveal a biaxial type of the anisotropy, instead of the easy-plane one, considered before. The weak in-plane anisotropy,…
Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li$_2$(Li$_{1-x}T_x$)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
Here we demonstrate that MnTe epitaxial films with zinc-blend structure and MnTe/ZnTe multilayers should show ferroelectric polarization in antiferromagnetically (AFM) ordered state and thus belong to multiferroics. Spontaneous…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…