Related papers: The TRAMOS pixel as a photo-detection device: desi…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized…
The Penning-trap electronic-detection technique that offers the precision and sensitivity requested in mass spectrometry for fundamental studies in nuclear and particle physics has not been proven yet to be universal. This has motivated the…
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
An in-trap decay spectroscopy setup has been developed and constructed for use with the TITAN facility at TRIUMF. The goal of this device is to observe weak electron-capture (EC) branching ratios for the odd-odd intermediate nuclei in the…
Various techniques are used to detect the presence of charged particles stored in electromagnetic traps, their energy, their mass, or their internal states. Detection methods can rely on the variation of the number of trapped particles…
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here,…
The role of image charges in nanoporous semiconductor materials is investigated within the framework of the effective mass and envelope function approximations. We show that nanometric air bubbles in these materials can act as…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
Neutrino detectors are among the largest photon detection instruments, built to capture scarce photons upon energy deposition. Many discoveries in neutrino physics, including the neutrino itself, are inseparable from the advances in photon…
In beam test experiments have been carried out for particle identification using digital pulse shape analysis in a 500~$\mu$m thick Neutron Transmutation Doped (nTD) silicon detector with an indigenously developed FPGA based 12 bit…
This article describes a new experimental method for accelerator based neutrino experiments called neutrino tagging. The method consists in exploiting the neutrino production mechanism, the $\pi^{\pm}\to\mu^{\pm}\nu_\mu$ decay, to…
We have constructed and tested a 2d position sensitive parallel-plate gas ionization chamber with scanned charge transfer readout. The scan readout method described here is based on the development of a new position dependent charge…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…
Optical trapping has proven to be a valuable experimental technique for precisely controlling small dielectric objects. However, due to their very nature, conventional optical traps are diffraction limited and require high intensities to…
We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped…
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…