English
Related papers

Related papers: Tuning the two-dimensional electron liquid at oxid…

200 papers

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined…

Multiple experiments have observed a sharp transition in the band structure of LaAlO$_3$/SrTiO$_3$ (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and…

Mesoscale and Nanoscale Physics · Physics 2018-12-06 Amany Raslan , W. A. Atkinson

SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually…

There is steadily increasing evidence that the two-dimensional electron gas (2DEG) formed at the interface of some insulating oxides like LaAlO3/SrTiO3 and LaTiO3/SrTiO3 is strongly inhomogeneous. The inhomogeneous distribution of electron…

Mesoscale and Nanoscale Physics · Physics 2019-06-21 N. Bovenzi , S. Caprara , M. Grilli , R. Raimondi , N. Scopigno , G. Seibold

The diverse functionality emerging at oxide interfaces calls for a fundamental understanding of the mechanisms and control parameters of electronic reconstructions. Here, we explore the evolution of electronic phases in…

Strongly Correlated Electrons · Physics 2015-01-19 David Doennig , Rossitza Pentcheva

We study the electronic structures of TiO2/Ti4O7 and Ta2O5/TaO2 interfaces using the screened exchange (sX-LDA) functional. Both of these bilayer structures are useful infrastructures for high performance RRAMs. We find that the system…

Materials Science · Physics 2016-09-07 Huanglong Li , Ziyang Zhang , Luping Shi

Interface engineering in complex oxide heterostructures has developed into a flourishing field as various intriguing physical phenomena can be demonstrated which are otherwise absent in their constituent bulk compounds. Here we present…

Materials Science · Physics 2023-04-03 Snehal Mandal , Sandip Halder , Biswarup Satpati , Kalpataru Pradhan , I. Das

Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films has been an exciting challenge. Here we present for the first time the successful realization of a…

Low dimensional structures comprised of ferroelectric (FE) PbTiO$_3$ (PTO) and quantum paraelectric SrTiO$_3$ (STO) are hosts to complex polarization textures such as polar waves, flux-closure domains and polar skyrmion phases. Density…

Materials Science · Physics 2022-02-16 Jack S. Baker , David R. Bowler

Domain walls in AlO$_x$/SrTiO$_3$ (ALO/STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based…

Mesoscale and Nanoscale Physics · Physics 2021-07-21 P. W. Krantz , V. Chandrasekhar

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission…

Strongly Correlated Electrons · Physics 2015-09-01 Y. F. Nie , D. Di Sante , S. Chatterjee , P. D. C. King , M. Uchida , S. Ciuchi , D. G. Schlom , K. M. Shen

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…

Strongly Correlated Electrons · Physics 2015-07-21 Jun Zhou , Teguh Citra Asmara , Ming Yang , George A. Sawatzky , Yuan Ping Feng , Andrivo Rusydi

A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, Kondo scattering, magnetism and…

Strongly Correlated Electrons · Physics 2008-09-08 M. Huijben , A. Brinkman , G. Koster , G. Rijnders , H. Hilgenkamp , D. H. A. Blank

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field,…

Strongly Correlated Electrons · Physics 2012-08-21 A. Rastogi , J. J. Pulikkotil , S. Auluck , Z. Hossain , R. C. Budhani

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two…

Strongly Correlated Electrons · Physics 2018-07-24 Zhuoyu Chen , Hongtao Yuan , Yanwu Xie , Di Lu , Hisashi Inoue , Yasuyuki Hikita , Christopher Bell , Harold Y. Hwang

The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A…

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single…

The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with…

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…

‹ Prev 1 8 9 10 Next ›