Related papers: Tuning terahertz transitions in a double-gated qua…
Ultrafast charge transport in strongly biased semiconductors is at the heart of highspeed electronics, electro-optics, and fundamental solid-state physics. Intense light pulses in the terahertz (THz) spectral range have opened fascinating…
Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit…
We present an experiment where the quantum coherence in the edge states of the integer quantum Hall regime is tuned with a decoupling gate. The coherence length is determined by measuring the visibility of quantum interferences in a…
We consider the problem of quantum and classical phase transitions in double-layer quantum Hall systems at $\nu=1/m$ (m odd integers) from a long-wavelength statistical mechanics viewpoint. We derive an explicit mapping of the…
High-fidelity two-qubit entangling gates are essential building blocks for fault-tolerant quantum computers. Over the past decade, tremendous efforts have been made to develop scalable high-fidelity two-qubit gates with superconducting…
The notion of a double well potential typically involves two regions of space separated by a repulsive potential barrier. The solution is a wave function that is suppressed in the barrier region and localized in the two surrounding regions.…
The possibility of controlling the tunneling time between quantum wells by relocation of the subband wave function within the quantum well by varying the configuration of thin tunnel-transparent barriers embedded into the well is…
We proposed a scheme to realize a controlled-NOT quantum logic gate in a dimer of exchange coupled single-molecule magnets, $[\textrm{Mn}_4]_2$. We chosen the ground state and the three low-lying excited states of a dimer in a finite…
We probe quantum Hall effect in a tunable 1-D lateral superlattice (SL) in graphene created using electrostatic gates. Lack of equilibration is observed along edge states formed by electrostatic gates inside the superlattice. We create…
We develop a quantitative semiclassical formula for the resonant tunneling current through a quantum well in a tilted magnetic field. It is shown that the current depends only on periodic orbits within the quantum well. The theory explains…
Internal states of polar molecules can be controlled by microwave-frequency electric dipole transitions. If the applied microwave electric field has a spatial gradient, these transitions also affect the motion of these dipolar particles.…
In the quantum Hall regime, electronic correlations in double-layer two-dimensional electron systems are strong because the kinetic energy is quenched by Landau quantization. In this article we point out that these correlations are…
The phase diagram of diluted magnetic semiconductor quantum wells is investigated. The interaction between the carriers in the hole gas can lead to first order ferromagnetic transitions, which remain abrupt in applied fields. These…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
The precise control of quantum systems will play a major role in the realization of atomtronic devices. As in the case of electronic systems, a desirable property is the ability to implement switching. Here we show how to implement…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers,…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…