Related papers: Hall effect spintronics for gas detection
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier…
Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating…
The quantum Hall effect (QHE), which was observed in 2D electron gas under an external magnetic field, stands out as one of the most remarkable transport phenomena in condensed matter. However, a long standing puzzle remains regarding the…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…
Consequences of an exceedingly strong electric field (E field) on the ground state energetics and transport properties of a 2D spinless electron gas in a perpendicular magnetic field (a Quantum Hall Effect (QHE) configuration) are…
Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but…
Extraordinary Hall effect (EHE) in bilayer F/S(N) was investigated theoretically. The conductivity tensor $\sigma_{\alpha\beta}$ is calculated in the Kubo formalism with Green functions found as the solutions of the Gorkov equations. We…
This lecture aims to present an overview of the properties of Hall effect devices. Descriptions of the Hall phenomenon, a review of the Hall effect device characteristics and of the various types of probes are presented. Particular…
Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…
The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in…
We describe a 3He magnetometer capable to measure high magnetic fields (B > 0.1 Tesla) with a relative accuracy of better than 10^-12. Our approach is based on the measurement of the free induction decay of gaseous, nuclear spin polarized…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…