Related papers: A phononic switch based on ferroelectric domain wa…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of…
We present a first-principles study of 180-degree ferroelectric domain walls in tetragonal barium titanate. The theory is based on an effective Hamiltonian that has previously been determined from first-principles ultrasoft-pseudopotential…
Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their…
An evidence that the dielectric ageing in the polydomain Pb(Zr0.45Ti0.55)O3 thin films is controlled by progressive pinning of 180 domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest…
Using a Ginzburg--Landau--Devonshire model that includes the coupling of polarization to strain, we calculate the fluctuation spectra of ferroelectric domain walls. The influence of the strain coupling differs between 180 degree and 90…
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…
Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative…
In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we…
Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3 perovskites, ferroelastic domains formed during phase transitions enhance bulk…
We investigate the strain dependence of the ferroelectric polarization and the structure of the ferroelectric domain walls in the layered perovskite-related barium fluorides, BaMF$_4$ (M=Mg, Zn). The unusual "geometric ferroelectricity" in…
Active thermal management requires advances in thermal switching materials, whose thermal conductivity responds to external stimuli. The electric field, as one of the most convenient and effective stimuli, has shown great potential in…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
With the development of ferroelectric memories, it is becoming increasingly important to understand the ferroelectric switching behaviors at small applied electric fields. In this \rv{paper}, we use discretized phase-field models to…
The Landau theory of 180 degrees domain walls in BaTiO3 type ferroelectric particles is presented. Results of exact description of domain walls in bulk enabled us to formulate variational approach to theory of domain walls in corresponding…
Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of…
Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…