Related papers: Valence band splitting in bulk dilute bismides
A theory of electronic Raman scattering in the presence of several energy bands crossing the Fermi surface is developed. The contributions to the light scattering cross section are calculated for each band and it is shown that the cross…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to…
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We apply the coherent potential approach to handle the…
We have investigated the effects of inplane and interplane nearest neighbour overlap integrals ($s_0$ and $s_1$) and site energy difference between atoms in two different sublattices in the same graphene layer ($\Delta$) on the electronic…
We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a…
The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…
The splitting instability of a doubly-quantized vortex in the BEC-BCS crossover of a superfluid Fermi gas is investigated by means of a low-energy effective field theory. Our linear stability analysis and non-equilibrium numerical…
The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and…
We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure…
Coupling the spin degree of freedom to the anisotropic orbital motion of two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman splitting with respect to different orientations of an in-plane magnetic field B relative…
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy…
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and…
An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A-point of the Brillouin zone is derived. It is shown that while for the usual antiferromagnetic order (magnetic moments in the…
Highly mismatched alloys (HMAs) have band structures strongly modified due to the introduction of the alloying element. We consider HMAs where the isolated state of the alloying element is near the host conduction band, which causes the…
A detailed investigation by one-step photoemission calculations of the GaN(0001)-(1x1) surface in comparison with recent experiments is presented in order to clarify its structural properties and electronic structure. The discussion of…
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated…
Crystal phase semiconductor heterostructures allow for electron confinement without uncertainties caused by chemical intermixing found in material heterostructures and are candidates for next generation optoelectronics devices ranging from…
The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and…