Related papers: Valence band splitting in bulk dilute bismides
We have investigated the effects of hydrostatic pressure and compressive biaxial strain on the $\Gamma$-point energy states of GaN and InN with zincblende crystal structure via first-principles DFT+HSE06 computation. To correctly reproduce…
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy.…
Using density functional theory calculations we investigate the electronic structure of graphene doped by deposition of foreign atoms. We demonstrate that, as the charge transfer to the graphene layer increases, the band structure of the…
In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA-VASP. Direct-indirect bandgap transition of BGaN alloys at…
The optical conductivity $\sigma_{1}(\omega)$ of Eu$_{1-x}$Ca$_{x}$B$_{6}$ has been obtained from reflectivity and ellipsometry measurements for series of compositions, $0\leq x\leq 1$. The interband part of $\sigma_{1}(\omega) $ shifts…
Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterparts. In addition to the modified dielectric environment,…
We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands,…
We investigated the valence electronic structure of diamondoid particles in the gas phase, utilizing valence photoelectron spectroscopy. The samples were singly or doubly covalently bonded dimers or trimers of the lower diamondoids. Both…
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…
Atomic diffraction through double slits and transmission gratings is well described in terms of the associated de Broglie waves and classical wave optics. However, for weakly bound and relatively large systems, such as the He_2 dimer, this…
We consider bilayer quantum Hall systems at total filling factor $\nu=1$ in presence of a bias voltage $\Delta_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study…
We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba…
First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding…
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally…
We studied a rotating Bose-Einstein condensate confined in ring trap configurations that can be produced starting with a bubble trap confinement, approximated by a Mexican hat and shifted harmonic oscillator potentials. Using a variational…
Germanium diselenide (GeSe$_{2}$) has recently attracted substantial interest as a rare example of one-dimensional (1D) van der Waals material. Here, we investigate the photovoltaic potential of bulk-stacked GeSe$_{2}$ chains using…
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
We study the exciton states in the symmetrically biased dice model, the electronic structures of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the model describes a two-dimensional semiconductor with…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…