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Related papers: Valence band splitting in bulk dilute bismides

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The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The…

Supercells are often used in ab initio calculations to model compound alloys, surfaces and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates…

Materials Science · Physics 2014-09-12 O. Rubel , A. Bokhanchuk , S. J. Ahmed , E. Assmann

We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…

Mesoscale and Nanoscale Physics · Physics 2015-05-07 M. V. Durnev , M. M. Glazov , E. L. Ivchenko

The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the…

Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and…

Materials Science · Physics 2016-09-19 Guangfu Luo , Kamran Forghani , Thomas F. Kuech , Dane Morgan

Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniques. However, theoretical insights into defect-related…

Materials Science · Physics 2025-07-03 Yujie Liu , Ishtiaque Ahmed Navid , Zetian Mi , Emmanouil Kioupakis

The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline…

Electronic band structures for Ba$_{6}$Ge$_{25}$ and Ba$_{4}$Na$_{2}$Ge$_{25}$ clathrates are calculated using linear muffin-tin orbital method within the local density approximation. It is found that barium states strongly contribute to…

Materials Science · Physics 2009-11-07 Ivica Zerec , Alexander Yaresko , Peter Thalmeier , Yuri Grin

The structural and electronic properties of zinc-blende (ZB) GaAs were calculated within the framework of plane wave density-functional theory (DFT) code JDFTx by using Becke 86 in 2D and PBE exchange correlation functionals from libXC. The…

Computational Physics · Physics 2019-11-26 Waqas Mahmood , Bing Dong

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope…

Materials Science · Physics 2013-05-03 Daniel W. Drumm , Akin Budi , Manolo C. Per , Salvy P. Russo , Lloyd C. L. Hollenberg

High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic…

We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a…

Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band…

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…

Materials Science · Physics 2009-10-31 A. J. Williamson , L. W. Wang , Alex Zunger

The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at…

Materials Science · Physics 2013-05-29 M. Gmitra , S. Konschuh , C. Ertler , C. Ambrosch-Draxl , J. Fabian

We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scale atomistic…

Materials Science · Physics 2018-10-17 Muhammad Usman , Christopher A. Broderick , Eoin P. O'Reilly

Biased bilayer graphene (BBG) is a variable band gap semiconductor, with a strongly field-dependent band gap of up to $300 \, \text{meV}$, making it of particular interest for graphene-based nano-electronic and -photonic devices. The…

Mesoscale and Nanoscale Physics · Physics 2022-03-21 Mikkel Ohm Sauer , Thomas Garm Pedersen

${\gamma}$-GeSe is a new type of layered bulk material that was recently successfully synthesized. By means of density functional theory first-principles calculations, we systematically studied the physical properties of two-dimensional…

Materials Science · Physics 2023-07-05 Shuyi Shi , Kuan-Rong Hao , Xing-Yu Ma , Qing-Bo Yan , Gang Su

We investigate the electronic structure of a noncentrosymmetric superconductor, BiPd using photoemission spectroscopy with multiple photon energies ranging from ultraviolet to hard x-ray. Experimental data exhibit interesting difference in…

The energy spectrum of a system of Bose atoms in the superfluid phase in an optical lattice of the graphene type has been studied. The dispersion laws for the energy bands and the single particle spectral densities are calculated in the…

Quantum Gases · Physics 2014-11-21 I. V. Stasyuk , O. V. Velychko , I. R. Dulepa