Related papers: Quantum Hall effect in ac driven graphene: from ha…
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in…
In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a…
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device…
Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such…
We investigate the emerging consequences of an applied strong in-plane electric field on a macroscopically large graphene sheet subjected to a perpendicular magnetic field, by determining in exact analytical form various many-body…
The quantum anomalous Hall (QAH) effect, first proposed in the Haldane model, is a paradigmatic example of the application of band topology in condensed matter physics. The recent experimental discoveries of high Chern number QAH effect in…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
We present three holographic constructions of fractional quantum Hall effect (FQHE) via string theory. The first model studies edge states in FQHE using supersymmetric domain walls in N=6 Chern-Simons theory. We show that D4-branes wrapped…
We report results of numerical studies of the integer quantum Hall effect in a tight binding model on a two-dimensional square lattice with non-interacting electrons, in the presence of a random potential as well as a uniform magnetic field…
We investigate new properties of the Dirac electrons in the finite graphene sample under perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the…
In a twisted graphene on hexagonal Boron Nitride, the presence of a gap and the breaking of the symmetry between carbon sublattices leads to multicomponent fractional quantum Hall effect (FQHE) due to the electrons correlation. We report on…
Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the…
We examine the photonic spin Hall effect (SHE) in a graphene-substrate system with the presence of external magnetic field. In the quantum Hall regime, we demonstrate that the in-plane and transverse spin-dependent splittings in photonic…
We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and…
We present a unified description of the quantum Hall effect in graphene on the basis of the 8-component Dirac Hamiltonian and the supersymmetric (SUSY) quantum mechanics. It is remarkable that the zero-energy state emerges because the…