Related papers: Is perpendicular magnetic anisotropy essential to …
We experimentally investigated the magnetic properties of NiCo$_2$O$_4$ epitaxial films known to be conductive oxides with perpendicular magnetic anisotropy (PMA) at room temperature. Both magneto-torque and magnetization measurements at…
Element-specific orbital magnetic moments and their anisotropies in perpendicularly magnetised Co/Pd multilayers are investigated using Co L-edge and Pd M-edge angle-dependent x-ray magnetic circular dichroism. We show that the orbital…
The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such…
The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and…
Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has…
Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, thereby it is highly desirable to develop new material…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
Perpendicular magnetic anisotropy (PMA) and low magnetic damping are the key factors for the free layer magnetization switching by spin transfer torque technique in magnetic tunnel junction devices. The magnetization precessional dynamics…
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy…
We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co$_2$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic…
An all-optical method of ultrafast spin rotation is put forward to precisely manipulate the polarization of relativistic charged particle beams of leptons or ions. In particular, laser-driven dense ultrashort beams are manipulated via…
Faster magnetic recording technology is indispensable to massive data storage and big data sciences. {All-optical spin switching offers a possible solution}, but at present it is limited to a handful of expensive and complex rare-earth…
Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the…
The ability to tune and switch magnetic anisotropy to a perpendicular orientation is a key challenge for implementing 2D magnets in spintronic devices. H-phase vanadium dichalcogenides V$X_2$ ($X$=Te, Se, S) are promising ferromagnetic…
The artificial tailoring of magnetic anisotropy by manipulation of interfacial morphology and film structure are of fundamental interest from application point of view in spintronic and magnetic memory devices. This letter reports an…
We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using…
Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…
The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops…
The dependence of the spin reorientation transition in ultra-thin ferromagnetic films on external magnetic fields is studied. For different orientations of the applied field with respect to the film, phase diagrams are calculated within a…