Related papers: Simulating the effect of boron doping in supercond…
The upper critical field, $H_{c2}$, of Mg(B$_{1-x}$C$_x$)$_2$ has been measured in order to probe the maximum magnetic field range for superconductivity that can be attained by C doping. Carbon doped boron filaments are prepared by CVD…
We report the effect of carbon doping in Ti-stabilized nonstoichiometric molybdenum diboride (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, which exhibits bulk superconductivity below $T_{\rm c}$ = 7.0 K. It is found that…
We investigate the superconductivity of carbon compounds with a sodalite structure, which are similar to hydrogen compounds showing the high-temperature superconductivity. A systematic analysis by first-principles calculations is carried…
We present details of synthesis optimization and physical properties of nearly single phase carbon doped MgB2 with a nominal stoichiometry of Mg(B{0.8}C{0.2})2 synthesized from magnesium and boron carbide (B4C) as starting materials. The…
The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…
We report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (8-9 GPa) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat, and field-dependent resistance…
The effects of isovalent doping on the superconducting transition temperature Tc in novel 112-type iron arsenide Ca1-xLaxFeAs2 were studied by conducting measurements of electrical resistivity rho and magnetization M. P or Sb doping…
Recent studies of hydrogen-dominant (superhydride) materials, such as LaH10 have led to putative discoveries of near-room temperature superconductivity at high pressures, with a superconducting transition temperature (Tc) of 250 K observed…
The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide…
We report the preparation method of, and boron isotope effect for MgB$_2$, a new binary intermetallic superconductor with a remarkably high superconducting transition temperature $T_c$($^{10}$B) = 40.2 K. Measurements of both temperature…
Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…
Pressurized hydrogen-rich compounds, which could be viewed as precompressed metallic hydrogen, exhibit high superconductivity, thereby providing a viable route toward the discovery of high-temperature superconductors. Of particular interest…
First-principles calculations were carried out to provide a chemical basis for proposed structures associated with the recently reported room-temperature superconductivity in a carbonaceous sulfur hydride material under pressure.…
We investigate the possibility of achieving high-temperature superconductivity in hydrides under pressure by inducing metallization of otherwise insulating phases through doping, a path previously used to render standard semiconductors…
Recent theoretical and experimental studies of hydrogen-rich materials at megabar pressures (i.e., >100 GPa) have led to the discovery of very high-temperature superconductivity in these materials. Lanthanum superhydride LaH$_{10}$ has been…
Superconducting transition temperature is calculated for differently doped bilayer cuprates. Superexchange is assumed to be the dominating mechanism of high-temperature superconductivity, but the contribution from the phonon potential is…
Boron doped amorphous conducting carbon films show MI transition induced by doping. In this paper we discuss the ac conductivity of the films, which lie on the insulating side of MI transition. The ac conductivity data is analyzed as a…
We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the…
We study the effect of doping the semiconductor with the resonance negative U-centers upon its superconducting transition temperature. The attraction of electrons at the U-centers leads to the enhancement of transition temperature. On the…