Related papers: Photocurrent in Bismuth Junctions with Graphene
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…
Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway…
We propose an on-chip CMOS compatible graphene plasmonic photodetector based on the photo-thermoelectric effect (PTE) that occurs across an entire homogeneous graphene channel. The proposed photodetector incorporates the long-range…
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…
Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical…
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible…
Graphene has shown great potential for modulating infrared (IR) light in devices as small as 350 nm. At these length scales, nanoscale features of devices, and their interaction with light, can be expected to play a significant role in…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
The cooling of hot electrons in graphene is the critical process underlying the operation of exciting new graphene-based optoelectronic and plasmonic devices, but the nature of this cooling is controversial. We extract the hot electron…
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…
The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because graphene is an atomically thin material, its absorption of guided optical modes…
Recent progress in nanophotonics is driven by the desire to engineer light-matter interaction in two-dimensional (2D) materials using high-quality resonances in plasmonic and dielectric structures. Here, we demonstrate a link between the…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
Graphene electrodes provide a suitable alternative to metal contacts in molecular conduction nanojunctions. Here, we propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction…
Studies of the structural, electronic, and optical characteristics of the interfaces between graphene and ZnO polar surfaces is carried out using first-principles simulations. At the interface, a strong van der Waals force is present, and…
Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical…
We present a nonperturbative quasi-classical theory of graphene photoconductivity. We consider the influence of low-frequency (microwave, terahertz, mid-infrared) radiation on the static conductivity of a uniform graphene layer and…
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence…
Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to…
Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to…